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单P-MOS

CST60P03D PDFN3333-8L

    CST60P03D是BVDSS=-30V,RDSON=7.5mΩ,ID=-55A的P沟道快速切换Mosfets。提供PDFN3333-8L封装。
    The CST60P03D is the highest performance trench P-ch MOSFETs with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
    The CST60P03D meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
    CST60P03D Description/描述:
        CST60P03D是BVDSS=-30V,RDSON=7.5mΩ,ID=-55A的P沟道快速切换Mosfets。提供PDFN3333-8L封装。
        The CST60P03D is the highest performance trench P-ch MOSFETs with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
        The CST60P03D meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

    CST60P03D Features/特性:
    100% EAS Guaranteed
    Green Device Available
    Super Low Gate Charge
    Excellent CdV/dt effect decline
    Advanced high cell density Trench technology

    CST60P03D Product Summary/概览:
    BVDSS
    RDSON
    ID

    -30V

    7.5mΩ

    -55A

    CST60P03D PDFN3333-8L Pin Configuration/引脚配置:

    CST60P03D Test Circuit/测试电路:








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