HY400P10LR1D/U/V概述：
HY400P10LR1D/U/V是VDS=-100V,ID=-40A,RDS(ON)=42mΩ(typ.)@VGS=-10V,RDS(ON)=48mΩ(typ.)@VGS=-4.5V的P沟道增强型MOSFET.
HY400P10LR1D/U/V提供TO-252-2L/TO-251-3L/TO-251-3S三种封装。
HY400P10LR1D/U/V特性：
-100V/-40A
RDS(ON)=42mΩ(typ.)@VGS=-10V
RDS(ON)=48mΩ(typ.)@VGS=-4.5V
100% Avalanche Tested
Reliable and Rugged
Halogen Free and Green Devices Available (RoHS Compliant)
HY400P10LR1D/U/V应用：
Portable equipment and battery powered systems
DC-DC Converters
Motor control.
HY400P10LR1D/U/V封装示意图：
HY400P10LR1D/U/V典型应用图：
HY400P10LR1D/U/V封装示意图：
HY400P10LR1D/U/V典型应用图：
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