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单P-MOS

MXN3345 PDFN3.3x3.3-8L

    MXN3345是-30V,-30A的P沟道增强型功率MOSFET,
    MXN3345丝印:3345,MXN3345提供PDFN3.3x3.3-8L封装
    The MXN3345 uses advanced trench technology to provide excellent RDS(ON),low gate charge and operation with gate voltages as low as 4.5V.
    This device is suitable for use as a load switch or in PWM and a wide varieer applications.
    MXN3345概述:
        MXN3345是-30V,-30A的P沟道增强型功率MOSFET,
        MXN3345丝印:3345,MXN3345提供PDFN3.3x3.3-8L封装
        The MXN3345 uses advanced trench technology to provide excellent RDS(ON),low gate charge and operation with gate voltages as low as 4.5V.
        This device is suitable for use as a load switch or in PWM and a wide varieer applications.

    MXN3345特性
    VDS=-30V,ID=-30A
    RDS(ON) (Typ.)=12m@ VGS=-10V
    RDS(ON) (Typ.)=22m@VGS=-4.5V
    MXN3345丝印:3345
    MXN3345提供PDFN3.3x3.3-8L封装
    High Power and current handing capability
    Lead free product is acquired
    Surface mount package

    MXN3345应用:
    PWM applications
    Load switch
    Power management

    MXN3345典型应用及引脚图:

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