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单P-MOS

PE7209M PDFN3.3x3.3-8L

    PE7209M是VDS=-20V,ID=-25A,RDS(ON)<16mΩ,@VGS=-4.5V,RDS(ON)<22mΩ,@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
    PE7209M的丝印是PE7209M.PE7209M提供PDFN3.3x3.3-8L封装.
    The PE7209M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE7209M概述:
        PE7209M是VDS=-20V,ID=-25A,RDS(ON)<16mΩ,@VGS=-4.5V,RDS(ON)<22mΩ,@VGS=-2.5V的P-Channel Enhancement Mode Power MOSFET.
        PE7209M的丝印是PE7209M.PE7209M提供PDFN3.3x3.3-8L封装.
        The PE7209M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE7209M特性:
    VDS = -20V, ID = -25A
    RDS(ON) < 16mΩ @ VGS=-4.5V
    RDS(ON) < 22mΩ @VGS=-2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE7209M应用:
    PWM applications
    Load switch
    Power management
    Battery protection

    PE7209M典型应用及引脚:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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