PE30P65K概述：
PE30P65K是VDS=-30V,ID=-65A，RDS(ON)<5.2mΩ，@VGS=-20V，RDS(ON)<6mΩ，@VGS=-10V，RDS(ON)<8mΩ，@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.PE30P65K的丝印是PE30P65K.PE30P65K提供TO-252-2L封装.
The PE30P65K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PE30P65K特性：
VDS = -30V, ID = -65A
RDS(ON) < 5.2mΩ @ VGS=-20V
RDS(ON) < 6mΩ @ VGS=-10V
RDS(ON) < 8mΩ @VGS=-4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PE30P65K应用：
PWM applications
Load switch
Power management
Battery Protection
PE30P65K典型应用及引脚图：
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