PE3117C是VDS=-30V,ID=-7A,RDS(ON)<22mΩ,@VGS=-10V,RDS(ON)<32mΩ,@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.
    PE3117C的丝印是3117C.PE3117C提供SOT-23-3L封装.

    The PE3117C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

PE3117C特性：

VDS = -30V, ID = -7A

RDS(ON) < 22mΩ @ VGS=-10V

RDS(ON) < 32mΩ @VGS=-4.5V

ESD Rating: ≥4000V HBM

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PE3117C应用：

PWM applications

Load switch

Power management

PE3117C典型应用及引脚：