PE3117F概述：
PE3117F是VDS=-30V,ID=-9.5A，RDS(ON)<22mΩ，@VGS=-10V，RDS(ON)<32mΩ，@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.
PE3117F的丝印是3117F.PE3117F提供UDFN2x2-6L封装.
PE3117F的丝印是3117F.PE3117F提供UDFN2x2-6L封装.
The PE3117F uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
PE3117F特性：
VDS = -30V, ID = -9.5A
RDS(ON) < 22mΩ @ VGS=-10V
RDS(ON) < 32mΩ @VGS=-4.5V
ESD Rating: ≥4000V HBM
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PE3117F应用：
PWM applications
Load switch
Power management
PE3117F典型应用及引脚：
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