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PE8335M是VDS=30V,ID=35A,RDS(ON)<7.5mΩ@VGS=10V,RDS(ON)<14mΩ@VGS=4.5V的N沟道MOSFET。
PE8335M的丝印是PE8335M，PE8335M提供PDFN3.3x3.3-8L封装。

The PE8335M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8335M概述：

PE8335M是VDS=30V,ID=35A,RDS(ON)<7.5mΩ@VGS=10V,RDS(ON)<14mΩ@VGS=4.5V的N沟道MOSFET。
PE8335M的丝印是PE8335M，PE8335M提供PDFN3.3x3.3-8L封装。

The PE8335M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8335M特性：

VDS = 30V, ID = 35A

RDS(ON) < 7.5mΩ @ VGS=10V

RDS(ON) < 14mΩ @VGS=4.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PE8335M应用：

PWM applications

Load switch

PE8335M典型应用及引脚：