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PE8806B是VDS=18V，ID=6A，RDS(ON)<15mΩ @VGS=4.5V，RDS(ON)<17mΩ @VGS=3.8V，RDS(ON)<22mΩ @VGS=2.5V的N沟道MOSFET。
PE8806B的丝印是8806B,PE8806B提供SOT-23-6L封装。

The PE8806B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8806B概述：

PE8806B是VDS=18V，ID=6A，RDS(ON)<15mΩ @VGS=4.5V，RDS(ON)<17mΩ @VGS=3.8V，RDS(ON)<22mΩ @VGS=2.5V的N沟道MOSFET。
PE8806B的丝印是8806B,PE8806B提供SOT-23-6L封装。

The PE8806B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE8806B特性：

VDS = 18V, ID = 6A

RDS(ON) < 15mΩ @ VGS=4.5V

RDS(ON) < 17mΩ @VGS=3.8V

RDS(ON) < 22mΩ @VGS=2.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PE8806B应用：

Battery Protection

Load switch

Power management

PE8806B典型应用及引脚：