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单N-MOS

PED2310L DFN2x3-6L

    PED2310L是VDS=18V,ID=8A,RDS(ON)<15mΩ@VGS=4.5V,RDS(ON)<17mΩ@VGS=3.8V,RDS(ON)<19mΩ@VGS=3.1V,RDS(ON)<22mΩ@VGS=2.5V的N沟道MOSFET.
    PED2310L的丝印是NG25,PED2310L提供DFN2x3-6L封装。
    The PED2310L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
    PED2310L概述:
        PED2310L是VDS=18V,ID=8A,RDS(ON)<15mΩ@VGS=4.5V,RDS(ON)<17mΩ@VGS=3.8V,RDS(ON)<19mΩ@VGS=3.1V,RDS(ON)<22mΩ@VGS=2.5V的N沟道MOSFET.PED2310L的丝印是NG25,PED2310L提供DFN2x3-6L封装。
        The PED2310L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

    PED2310L特性:
    VDS = 18V, ID = 8A
    RDS(ON) < 15mΩ @ VGS=4.5V
    RDS(ON) < 17mΩ @VGS=3.8V
    RDS(ON) < 19mΩ @VGS=3.1V
    RDS(ON) < 22mΩ @VGS=2.5V
    ESD Rating: 4000V HBM
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount

    PED2310L应用:
    PWM applications
    Load switch
    Power management

    PED2310L典型应用及引脚:


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