PED2313N概述：
PED2313N是VDS=18V，ID=9.5A，RDS(ON)<9mΩ@VGS=4.5V，RDS(ON)<10mΩ@VGS=3.8V，RDS(ON)<11.5mΩ@VGS=3.1V，RDS(ON)<14mΩ@VGS=2.5V的N沟道MOSFET。PED2313N的丝印是SC29，PED2313N提供DFN2x3-6L封装。
The PED2313N uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
PED2313N特性：
VDS = 18V, ID = 9.5A
RDS(ON) < 9mΩ @ VGS=4.5V
RDS(ON) < 10mΩ @VGS=3.8V
RDS(ON) < 11.5mΩ @VGS=3.1V
RDS(ON) < 14mΩ @VGS=2.5V
ESD Rating: 4000V HBM
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PED2313N应用：
PWM applications
Load switch
Power management
PED2313N典型应用及引脚：
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