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单N-MOS

CST120N03 TO252

    CST120N03是VDS=30V,,ID=120A,RDSON=3.0mΩ的N沟道Mosfets,提供TO252封装。
    The CST120N03 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
    The CST120N03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
    CST120N03 Description/概述:
        CST120N03是VDS=30V,,ID=120A,RDSON=3.0mΩ的N沟道Mosfets,提供TO252封装。
        The CST120N03 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
        The CST120N03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

    CST120N03 Features/特性:
    Super Low Gate Charge
    100% EAS Guaranteed
    Green Device Available
    Excellent CdV/dt effect decline
    Advanced high cell density Trench technology

    CST120N03 Product Summary/产品概览:

    BVDSS
    RDSON
    ID
    30V
    3.0
    120A

    CST120N03 Pin Configuration/引脚配置:


    CST120N03 Package information/封装信息:




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