MXN035N02概述：
MXN035N02是VDS=20V, ID=56A，RDS(ON)(Typ.)=4.7mΩ@VGS=2.5V，RDS(ON)(Typ.)=3.5mΩ@VGS=4.5V的N沟道MOSFET.MXN035N02的丝印是035N02.MXN035N02提供DFN5*6-8L封装.
The MXN035N02 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a wide variety of applications.
MXN035N02特性：
VDS=20V, ID=56A
RDS(ON)(Typ.)=4.7mΩ @ VGS=2.5V
RDS(ON)(Typ.)=3.5mΩ @ VGS=4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
MXN035N02应用：
Battery Protection
Load switch
Power management
MXN035N02订购信息：
MXN035N02订购信息：
|
Device |
Marking |
StorageTemperature |
Package |
Devices Per Reel |
|
MXN035N02 |
035N02 |
-55°C to 150°C |
DFN5X6-8L |
2500 |
MXN035N02典型应用及管脚图：
发送邮件
商务QQ客服
13823761625
