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单N-MOS

HYG025N06LS1D TO-252-2

    HYG025N06LS1D是VDS=60V,ID=160A,RDS(ON)=2.6mΩ(typ.)@VGS=10V,RDS(ON)=3.8mΩ(typ.)@VGS=4.5V的N沟道MOSFET.
    HYG025N06LS1D的丝印是D 
G025N06 XYMXXXXXX.
    HYG025N06LS1D提供TO-252-2L封装.
    HYG025N06LS1D概述:
        HYG025N06LS1D是
    VDS=60V,ID=160A,RDS(ON)=2.6mΩ(typ.)@VGS=10V,RDS(ON)=3.8mΩ(typ.)@VGS=4.5V的N沟道MOSFET.
        HYG025N06LS1D的丝印是D G025N06 XYMXXXXXX.
        HYG025N06LS1D提供TO-252-2L封装.

    HYG025N06LS1D特性:
    VDS=60V,ID=160A
    RDS(ON)=2.6mΩ(typ.)@VGS=10V
    RDS(ON)=3.8mΩ(typ.)@VGS=4.5V
    100% Avalanche Tested
    Reliable and Rugged
    Halogen- Free Devices Available (RoHS Compliant)

    HYG025N06LS1D应用:
    High Frequency Point-of-Load Synchronous Buck Converter
    Power Tool Application
    Networking DC-DC Power System

    HYG025N06LS1D应用电路及封装图:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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