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PE8203 SOT23-6L

    PE8203是VDS=18V,ID=6.5A,RDS(ON)<20mΩ,@VGS=4.5V,RDS(ON)<21mΩ,@VGS=3.8V,RDS(ON)<28mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
    PE8203的丝印是8203.PE8203提供SOT-23-6L封装.
    The PE8203 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE8203概述:
        PE8203是VDS=18V,ID=6.5A,RDS(ON)<20mΩ,@VGS=4.5V,RDS(ON)<21mΩ,@VGS=3.8V,RDS(ON)<28mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.PE8203的丝印是8203.PE8203提供SOT-23-6L封装.
        The PE8203 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8203特性:
    VDS = 18V, ID = 6.5A
    RDS(ON) < 20mΩ @ VGS=4.5V
    RDS(ON) < 21mΩ @VGS=3.8V
    RDS(ON) < 28mΩ @VGS=2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8203应用:
    Battery Protection
    Load switch

    PE8203典型应用及引脚:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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