PE8262M概述：
PE8262M是VDS=20V,ID=25A,RDS(ON)<3.5mΩ,@VGS=4.5V,RDS(ON)<5.0mΩ,@VGS=2.5V,RDS(ON)<8.0mΩ,@VGS=1.8V的N-Channel Enhancement Mode Power MOSFET.
PE8262M的丝印是PE8262M.PE8262M提供PDFN3.3x3.3-8L封装.
PE8262M的丝印是PE8262M.PE8262M提供PDFN3.3x3.3-8L封装.
The PE8262M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PE8262M特性：
VDS = 20V, ID = 25A
RDS(ON) < 3.5mΩ@VGS=4.5V
RDS(ON) < 5.0mΩ @VGS=2.5V
RDS(ON) < 8.0mΩ@VGS=1.8V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PE8262M应用：
PWM applications
Load switch
Battery Protection
PE8262M典型应用及引脚：
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