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PE83H0K是VDS=30V,ID=100A，RDS(ON)<3.6mΩ@VGS=10V，RDS(ON)<5.2mΩ@VGS=4.5V的N沟道MOSFET。
PE83H0K的丝印是PE83H0K。PE83H0K提供TO-252-2L封装。

The PE83H0K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE83H0K概述：

PE83H0K是VDS=30V,ID=100A，RDS(ON)<3.6mΩ@VGS=10V，RDS(ON)<5.2mΩ@VGS=4.5V的N沟道MOSFET。
PE83H0K的丝印是PE83H0K。PE83H0K提供TO-252-2L封装。

The PE83H0K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE83H0K特性：

VDS = 30V, ID = 100A

RDS(ON) < 3.6mΩ@ VGS=10V

RDS(ON) < 5.2mΩ @VGS=4.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PE83H0K应用：

Battery management

Motor controller and driver

PWM applications

Load switch

PE83H0K典型应用及引脚：