UM4606概述：
UM4606是一款N+P的双沟道MOSFET.
UM4606是一款N+P的双沟道MOSFET.
The UM4606 is the complementary enhancement mode power field effect transistor is produced using high cell density advanced trench technology to provide excellent RDS(ON).
This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications
UM4606特性：
30V/7.0A, RDS(ON)=21mΩ @VGS=10V N_CH
-30V/-6.0A, RDS(ON)=33mΩ @VGS=-10V P_CH
30V/5.0A, RDS(ON)=34mΩ @VGS=4.5V N_CH
-30V/-5.0A, RDS(ON)=38mΩ @VGS=-4.5V P_CH
Super high design for extremely low RDS(ON)
Exceptional on-resistance and Maximum DC current capability
Full RoHS compliance
SOP8 package design
UM4606应用：
High Frequency Point-of-Load Synchronous
New working DC-DC Power System
Load Switch
UM4606引脚配置：
发送邮件
商务QQ客服
13823761625
