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CST4G03 SOT23-6
CST4G03 is N:VDS=30V,REDSON=29mΩ,ID=4A; P:VDS=-30V,REDSON=55mΩ,ID=-4A N+P dual-channel Mosfet in SOT23-6 package.
The CST4G03 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density ,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The CST4G03 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density ,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
CST4G03 Description:
CST4G03 is N:VDS=30V,REDSON=29mΩ,ID=4A; P:VDS=-30V,REDSON=55mΩ,ID=-4A N+P dual-channel Mosfet in SOT23-6 package.
The CST4G03 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density ,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The CST4G03 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density ,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The CST4G03 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
CST4G03 Features：
Advanced high cell density Trenchtechnology
Super Low Gate Charge
Excellent CdV/dt effect decline
Green Device Available
CST4G03 Applications:
Power management in half bridge and inverters
DC-DC Converter
Load Switch
CST4G03 Product Summary：
BVDSS | RDSON | ID |
30V | 29mΩ | 4A |
-30V | 55mΩ | -4A |
CST4G03 SOT23-6L Pin Configuration：
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