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PED30P09M是VDS=-30V，ID=-9A，RDS(ON)<30mΩ@VGS=-10V，RDS(ON)<45mΩ@VGS=-4.5V的P沟道MOSFET。
PED30P09M的丝印是30P09M，PED30P09M提供PDFN3.3x3.3-8L封装。

The PED30P09M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PED30P09M概述：

PED30P09M是VDS=-30V，ID=-9A，RDS(ON)<30mΩ@VGS=-10V，RDS(ON)<45mΩ@VGS=-4.5V的P沟道MOSFET。PED30P09M的丝印是30P09M，PED30P09M提供PDFN3.3x3.3-8L封装。

The PED30P09M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PED30P09M特性：

VDS = -30V, ID = -9A

RDS(ON) < 30mΩ@ VGS=-10V

RDS(ON) < 45mΩ@VGS=-4.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PED30P09M应用：

PWM applications

Load switch

Power management

PED30P09M典型应用及引脚：