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单P-MOS

PED805 UDFN2x2-6L

    PED805是VDS=-12V,ID=-8.5A,RDS(ON)<18mΩ,@VGS=-4.5V,RDS(ON)<25mΩ@VGS=-2.5V的P沟道MOSFET。
    PED805的丝印是D805,PED805提供UDFN2x2-6L封装。
    The PED805 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PED805概述:
        PED805是VDS=-12V,ID=-8.5A,RDS(ON)<18mΩ,@VGS=-4.5V,RDS(ON)<25mΩ@VGS=-2.5V的P沟道MOSFET。PED805的丝印是D805,PED805提供UDFN2x2-6L封装。
        The PED805 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PED805特性:
    VDS =-12V, ID =-8.5A
    RDS(ON) < 18mΩ @VGS=-4.5V
    RDS(ON) < 25mΩ @VGS=-2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PED805应用:
    PWM applications
    Load switch
    Power management
    Battery Protection

    PED805典型应用及引脚:

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