PE30P65K是VDS=-30V,ID=-65A，RDS(ON)<5.2mΩ，@VGS=-20V，RDS(ON)<6mΩ，@VGS=-10V，RDS(ON)<8mΩ，@VGS=-4.5V的P-Channel Enhancement Mode Power MOSFET.PE30P65K的丝印是PE30P65K.PE30P65K提供TO-252-2L封装.

    The PE30P65K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

VDS = -30V, ID = -65A

RDS(ON) < 5.2mΩ @ VGS=-20V

RDS(ON) < 6mΩ @ VGS=-10V

RDS(ON) < 8mΩ @VGS=-4.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PWM applications

Load switch

Power management

Battery Protection