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PED30D12M是VDS=30V，ID=12A，RDS(ON)<14mΩ@VGS=10V，RDS(ON)<20mΩ@VGS=4.5V的N沟道MOSFER。
PED30D12M的丝印是30D12M，PED30D12M提供PDFN3.3x3.3-8L封装。

The PED30D12M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PED30D12M概述：

PED30D12M是VDS=30V，ID=12A，RDS(ON)<14mΩ@VGS=10V，RDS(ON)<20mΩ@VGS=4.5V的N沟道MOSFER。PED30D12M的丝印是30D12M，PED30D12M提供PDFN3.3x3.3-8L封装。

The PED30D12M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PED30D12M特性：

VDS = 30V, ID = 12A

RDS(ON) < 14mΩ @ VGS=10V

RDS(ON) < 20mΩ @VGS=4.5V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PED30D12M应用：

PWM applications

Load switch

Power management

PED30D12M典型应用及引脚：