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MXB040N10 TO-263-3L

    MXB040N10 is an N-channel enhanced mode power Mosfet with VDS=100V, ID=128A, RDS (ON) (Typ.)=4.0m Ω @ VGS=10V. Provide TO-263-3L packaging.
    The MXB040N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a wide variety of applications.
    MXB040N10 Description/描述:
        MXB040N10 is an N-channel enhanced mode power Mosfet with VDS=100V, ID=128A, RDS (ON) (Typ.)=4.0m Ω @ VGS=10V. Provide TO-263-3L packaging.
        The MXB040N10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a wide variety of applications.

    MXB040N10 Features/特征:
    VDS=100V, ID=128A
    RDS(ON)(Typ.)=4.0mΩ @ VGS=10V
    High Power and current handing capability
    Lead free product is acquired

    MXB040N10 Application/应用:
    Uninterruptible power supply
    Hard switched and high frequency circuits

    MXB040N10 Pinout/引脚:

    MXB040N10 Ordering Information/订购信息:
    Part Number
    StorageTemperature
    Package
    Devices Per Reel

    MXB040N10

    -55°C to 175°C

    TO-263

    800

    MXB040N10 Test Circuits/测试电路:








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