HY4306P/B概术：
HY4306P/B是VDS=60V,ID=230A,RDS(ON)=2.6mΩ(typ.)@VGS=10V的N沟道增强型MOSFET.
HY4306P/B提供TO-220FB-3L/TO-263-2L封装. HY4306P/B,HY4306P TO220FB-3L/HY4306B TO263-2LM HY4306P/B提供TO-220FB-3L/TO-263-2L封装.
HY4306P/B特性：
60V/230A
RDS(ON)=2.6mΩ(typ.)@VGS=10V
100% avalanche tested
Reliable and Rugged
Lead Free and Green DevicesAvailable(RoHS Compliant)
HY4306P/B应用：
Switching application
Power Management for Inverter Systems.
HY4306P/B典型应用电路及封装图：
HY4306P/B典型应用电路及封装图：
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