High performance grooved field cutoff IGBT for motor control, solar energy, and continuous power applications

    These new devices enhance the overall switching energy efficiency of the system, reduce power dissipation, and enhance system reliability. These latest IGBT devices have been added to more than 30 IGBT product series of Onsemi semiconductors, raising the rated current capacity of the products to a maximum of 40 A. These products include high-performance power conversion devices specifically designed for solar and uninterruptible power supply (UPS) applications.

    John Trice, Senior Director and General Manager of Onsemi Semiconductor Power Discrete Products, said: "The dramatic increase in global energy consumption and the adverse impact on the economy and the environment continue to drive the demand for higher performance power discrete components. These new generation devices provide high cost performance and industry-leading energy efficiency without damaging strong solidity. Onsemi Semiconductor‘s proprietary groove type field cut-off technology can provide engineers with more choices when applying its power system design."

    The first group of new IGBTs are NGTB40N120FLWG, NGTB25N120FLWG, and NGTB15N120FLWG. These products adopt a strong and cost-effective groove technology structure, providing excellent performance for high-frequency switch applications. Low switching loss and ultra fast recovery diodes make them very suitable for high-frequency solar, UPS, and inverter welding applications. These devices have rated collector current (IC) of 40 A, 25 A, and 15 A, respectively. All three devices are highly optimized for switching applications ranging from 10 kHz to 40 kHz, providing low conduction voltage (VCEsat) and low gate charge (Qg) characteristics, as well as ultra fast recovery capability, providing extremely low switching losses to maintain low power dissipation. These new IGBT devices provide operating junction temperatures ranging from -55 ° C to+150 ° C.

    The second group of new devices also broadened the lineup of trench type field cut-off IGBT devices of Onsemi Semiconductor, raising the rated current capacity of the product to a maximum of 40 A. The NGTB30N120LWG and NGTB40N120LWG provide low Vcesat and strong short-circuit characteristics with fast recovery diodes for low-frequency (2-20 kHz) hard switching applications, such as motor controlled variable frequency applications. Complementing these two devices are NGTB30N120IHLWG, NGTB40N120IHLWG, NGTB20N120IHSWG and NGTB30N120IHSWG. These devices have balanced switching and conductive losses, and are used for electromagnetic induction heating at medium operating frequencies (15 – 30 kHz) and other soft switching applications, such as electric hotpots, Rice cooker, microwave ovens and other appliances.